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Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO(2) treated by H(3)PO(4)
Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO(2) immersed in 5% H(3)PO(4) for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature. Th...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072221/ https://www.ncbi.nlm.nih.gov/pubmed/35529372 http://dx.doi.org/10.1039/c9ra07166k |