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Topography inversion in scanning tunneling microscopy of single-atom-thick materials from penetrating substrate states

Scanning tunneling microscopy (STM) is one of the indispensable tools to characterize surface structures, but the distinction between atomic geometry and electronic effects based on the measured tunneling current is not always straightforward. In particular, for single-atomic-thick materials (graphe...

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Detalles Bibliográficos
Autores principales: Park, Changwon, Yoon, Mina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072348/
https://www.ncbi.nlm.nih.gov/pubmed/35513468
http://dx.doi.org/10.1038/s41598-022-10870-0