Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu(3)In(5)Te(9)-based chalcogenides

Copper vacancy concentration (V(c)) in ternary Cu–In–Te chalcogenides is an important factor to engineer carrier concentration (n(H)) and thermoelectric performance. However, it is not sufficient to regulate the phonon scattering in the Cu(3)In(5)Te(9)-based chalcogenides. In this work we manipulate...

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Detalles Bibliográficos
Autores principales: Li, Min, Luo, Yong, Hu, Xiaojuan, Han, Zhongkang, Liu, Xianglian, Cui, Jiaolin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072708/
https://www.ncbi.nlm.nih.gov/pubmed/35527929
http://dx.doi.org/10.1039/c9ra06565b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072708/
https://www.ncbi.nlm.nih.gov/pubmed/35527929
http://dx.doi.org/10.1039/c9ra06565b

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