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Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu(3)In(5)Te(9)-based chalcogenides
Copper vacancy concentration (V(c)) in ternary Cu–In–Te chalcogenides is an important factor to engineer carrier concentration (n(H)) and thermoelectric performance. However, it is not sufficient to regulate the phonon scattering in the Cu(3)In(5)Te(9)-based chalcogenides. In this work we manipulate...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9072708/ https://www.ncbi.nlm.nih.gov/pubmed/35527929 http://dx.doi.org/10.1039/c9ra06565b |