Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer

In current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment. Elec...

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Detalles Bibliográficos
Autores principales: He, Gang, Wang, Die, Ma, Rui, Liu, Mao, Cui, Jingbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9073671/
https://www.ncbi.nlm.nih.gov/pubmed/35528882
http://dx.doi.org/10.1039/c9ra07369h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9073671/
https://www.ncbi.nlm.nih.gov/pubmed/35528882
http://dx.doi.org/10.1039/c9ra07369h

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