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Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer

In current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment. Elec...

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Detalles Bibliográficos
Autores principales:	He, Gang, Wang, Die, Ma, Rui, Liu, Mao, Cui, Jingbiao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9073671/ https://www.ncbi.nlm.nih.gov/pubmed/35528882 http://dx.doi.org/10.1039/c9ra07369h

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