Cargando…

Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer

In current manuscript, a Ge metal-oxide-semiconductor (MOS) capacitor based on HfGdON/Ge gate stacks with an ALD-driven passivation layer has been fabricated, and its interfacial and electrical properties are compared with those of its counterparts that have not undergone passivation treatment. Elec...

Descripción completa

Detalles Bibliográficos
Autores principales:	He, Gang, Wang, Die, Ma, Rui, Liu, Mao, Cui, Jingbiao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9073671/ https://www.ncbi.nlm.nih.gov/pubmed/35528882 http://dx.doi.org/10.1039/c9ra07369h

Ejemplares similares

Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment
por: Liang, Shuang, et al.
Publicado: (2019)

Interface chemistry modulation and dielectric optimization of TMA-passivated HfDyO(x)/Ge gate stacks using doping concentration and thermal treatment
por: Wang, Die, et al.
Publicado: (2020)

A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates
por: Gao, Juan, et al.
Publicado: (2020)

Interfacial, Electrical, and Band Alignment Characteristics of HfO(2)/Ge Stacks with In Situ-Formed SiO(2) Interlayer by Plasma-Enhanced Atomic Layer Deposition
por: Cao, Yan-Qiang, et al.
Publicado: (2017)

Optical properties and bandgap evolution of ALD HfSiO(x) films
por: Yang, Wen, et al.
Publicado: (2015)

Interlayer Water Regulates the Bio-nano Interface of a β-sheet Protein stacking on Graphene
por: Lv, Wenping, et al.
Publicado: (2015)

Erratum to: Optical properties and bandgap evolution of ALD HfSiO(x)films
por: Yang, Wen, et al.
Publicado: (2015)

ERRATUM: Interlayer Water Regulates the Bio-nano Interface of a β-sheet Protein stacking on Graphene
por: Lv, Wenping, et al.
Publicado: (2015)

On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
por: Mahlouji, Reyhaneh, et al.
Publicado: (2021)

Immobilization of enzyme and antibody on ALD-HfO(2)-EIS structure by NH(3 )plasma treatment
por: Wang, I-Shun, et al.
Publicado: (2012)

Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO(2)/SiON Gate Stack
por: Chen, Yung-Yu
Publicado: (2014)

ALD Al(2)O(3) gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT
por: Chen, Kuan-Yu, et al.
Publicado: (2020)

Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer
por: Zhao, Lu, et al.
Publicado: (2019)

Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks
por: Heo, Hoseok, et al.
Publicado: (2015)

High performance and gate-controlled GeSe/HfS(2) negative differential resistance device
por: Afzal, Amir Muhammad, et al.
Publicado: (2022)

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO(2)/Al(2)O(3) Nanolaminated Dielectrics
por: Spassov, Dencho, et al.
Publicado: (2021)

Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging
por: Wang, Zhu-Jun, et al.
Publicado: (2016)

Collective interlayer pairing and pair superfluidity in vertically stacked layers of dipolar excitons
por: Zimmerman, Michal, et al.
Publicado: (2022)

Graphene/Ferroelectric (Ge-Doped HfO(2)) Adaptable Transistors Acting as Reconfigurable Logic Gates
por: Dragoman, Mircea, et al.
Publicado: (2022)

Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure
por: Khan, Z. N., et al.
Publicado: (2016)

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
por: Mukherjee, Kalparupa, et al.
Publicado: (2021)

Stacking angle-tunable photoluminescence from interlayer exciton states in twisted bilayer graphene
por: Patel, Hiral, et al.
Publicado: (2019)

Interlayer Difference of Bilayer-Stacked MoS(2) Structure: Probing by Photoluminescence and Raman Spectroscopy
por: Zhang, Xiangzhe, et al.
Publicado: (2019)

Stacking-Order-Dependent Excitonic Properties Reveal Interlayer Interactions in Bulk ReS(2)
por: van der Laan, Marco, et al.
Publicado: (2023)

Powder Interlayer Bonding of Nickel-Based Superalloys with Dissimilar Chemistries
por: Stanners, Olivia, et al.
Publicado: (2021)

Fabrication of Stacked MoS(2) Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer
por: Oh, Hye Min, et al.
Publicado: (2019)

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
por: Liu, Xiao-Yong, et al.
Publicado: (2015)

Soft-chemistry synthesis, solubility and interlayer spacing of carbon nano-onions
por: Guo, Aoping, et al.
Publicado: (2021)

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al(2)O(3) Gate Dielectrics
por: Yoshino, Michitaka, et al.
Publicado: (2019)

Self-Propagating Synthesis and Characterization Studies of Gd-Bearing Hf-Zirconolite Ceramic Waste Forms
por: Zhang, Kuibao, et al.
Publicado: (2019)

Weak Interlayer Interaction in 2D Anisotropic GeSe(2)
por: Yang, Yusi, et al.
Publicado: (2018)

Self-optimized superconductivity attainable by interlayer phase separation at cuprate interfaces
por: Misawa, Takahiro, et al.
Publicado: (2016)

Improved Endurance of Ferroelectric Hf(0.5)Zr(0.5)O(2) Using Laminated-Structure Interlayer
por: Chen, Meiwen, et al.
Publicado: (2023)

Vision Amniotic Leak Detector (ALD) to Eliminate Amniotic Fluid Leakage as a Cause of Vaginal Wetness in Pregnancy: A NICE Medical Technology Guidance
por: Ray, A. F., et al.
Publicado: (2015)

Hf Deposition Stabilizes the Surface Chemistry of Perovskite Manganite Oxide
por: Bliem, Roland, et al.
Publicado: (2021)

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement
por: Lin, Jyi-Tsong, et al.
Publicado: (2023)

A Gate Drive Circuit for Gate-Turn-Off (GTO) Devices in Series Stack
por: Despe, O, et al.
Publicado: (1999)

Impact of oxidation and reduction annealing on the electrical properties of Ge/La(2)O(3)/ZrO(2) gate stacks
por: Henkel, Christoph, et al.
Publicado: (2012)

Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta(2)O(5)/HfO(2-x)/Hf Stack
por: Ma, Haili, et al.
Publicado: (2017)

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application
por: Sahu, Bhabani Shankar, et al.
Publicado: (2011)

Cannot write session to /tmp/vufind_sessions/sess_184307rj1h4g9ndq402p2ddgef