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Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors
Self-aligned structured oxide thin-film transistors (TFTs) are appropriate candidates for use in the backplanes of high-end displays. Although SiN(x) is an appropriate candidate for use in the gate insulators (GIs) of high-performance driving TFTs, direct deposition of SiN(x) on top of high-mobility...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9075037/ https://www.ncbi.nlm.nih.gov/pubmed/35540589 http://dx.doi.org/10.1039/c9ra06960g |