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The electrical properties and modulation of g-C(3)N(4)/β-As and g-C(3)N(4)/β-Sb heterostructures: a first principles study
The electronic properties of the g-C(3)N(4)/β-As and g-C(3)N(4)/β-Sb heterojunctions are investigated via density functional theory. We find that both heterostructures are indirect band gap semiconductors that, when applied to a photocatalytic device, will suffer from inefficient light emission. For...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076001/ https://www.ncbi.nlm.nih.gov/pubmed/35540229 http://dx.doi.org/10.1039/c9ra06357a |