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The electrical properties and modulation of g-C(3)N(4)/β-As and g-C(3)N(4)/β-Sb heterostructures: a first principles study

The electronic properties of the g-C(3)N(4)/β-As and g-C(3)N(4)/β-Sb heterojunctions are investigated via density functional theory. We find that both heterostructures are indirect band gap semiconductors that, when applied to a photocatalytic device, will suffer from inefficient light emission. For...

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Detalles Bibliográficos
Autores principales:	Liang, Bo, Rao, Yongchao, Duan, Xiangmei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2019
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076001/ https://www.ncbi.nlm.nih.gov/pubmed/35540229 http://dx.doi.org/10.1039/c9ra06357a

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