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Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

First-principle calculations were employed to analyze the effects induced by vacancies of molybdenum (Mo) and sulfur (S) on the dielectric properties of few-layered MoS(2). We explored the combined effects of vacancies and dipole interactions on the dielectric properties of few-layered MoS(2). In th...

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Detalles Bibliográficos
Autores principales: Singh, Amit, Lee, Seunghan, Bae, Hyeonhu, Koo, Jahyun, Yang, Li, Lee, Hoonkyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076166/
https://www.ncbi.nlm.nih.gov/pubmed/35542649
http://dx.doi.org/10.1039/c9ra07700f