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Through-silicon via submount for the CuO/Cu(2)O nanostructured field emission display
A three dimensional (3D) field emission display structure was prepared using CuO/Cu(2)O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively....
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076816/ https://www.ncbi.nlm.nih.gov/pubmed/35538967 http://dx.doi.org/10.1039/c7ra12368j |