Through-silicon via submount for the CuO/Cu(2)O nanostructured field emission display

A three dimensional (3D) field emission display structure was prepared using CuO/Cu(2)O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively....

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Detalles Bibliográficos
Autores principales: Lu, Chun-Liang, Chang, Shoou-Jinn, Hsueh, Ting-Jen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076816/
https://www.ncbi.nlm.nih.gov/pubmed/35538967
http://dx.doi.org/10.1039/c7ra12368j
Descripción
Sumario:A three dimensional (3D) field emission display structure was prepared using CuO/Cu(2)O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu(2)O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu(2)O composite NWs were 15 V μm(−1) and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.

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