Mobility enhancement in heavily doped semiconductors via electron cloaking

Doping is central for solid-state devices from transistors to thermoelectric energy converters. The interaction between electrons and dopants plays a pivotal role in carrier transport. Conventional theory suggests that the Coulomb field of the ionized dopants limits the charge mobility at high carri...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhou, Jiawei, Zhu, Hangtian, Song, Qichen, Ding, Zhiwei, Mao, Jun, Ren, Zhifeng, Chen, Gang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076901/
https://www.ncbi.nlm.nih.gov/pubmed/35523766
http://dx.doi.org/10.1038/s41467-022-29958-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076901/
https://www.ncbi.nlm.nih.gov/pubmed/35523766
http://dx.doi.org/10.1038/s41467-022-29958-2

Ejemplares similares