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Mobility enhancement in heavily doped semiconductors via electron cloaking
Doping is central for solid-state devices from transistors to thermoelectric energy converters. The interaction between electrons and dopants plays a pivotal role in carrier transport. Conventional theory suggests that the Coulomb field of the ionized dopants limits the charge mobility at high carri...
Autores principales: | Zhou, Jiawei, Zhu, Hangtian, Song, Qichen, Ding, Zhiwei, Mao, Jun, Ren, Zhifeng, Chen, Gang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076901/ https://www.ncbi.nlm.nih.gov/pubmed/35523766 http://dx.doi.org/10.1038/s41467-022-29958-2 |
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