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Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting

Thin semiconductors attract huge interest due to their cost-effective, flexible, lightweight, and semi-transparent properties. Here, we present a protocol on the preparation of thin semiconductor via controlled crack-assisted layer exfoliation technique. The protocol details the fabrication procedur...

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Detalles Bibliográficos
Autores principales: Lee, Yonghwan, Gupta, Bikesh, Tan, Hark H., Jagadish, Chennupati, Oh, Jihun, Karuturi, Siva
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076963/
https://www.ncbi.nlm.nih.gov/pubmed/35535167
http://dx.doi.org/10.1016/j.xpro.2021.101015
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author Lee, Yonghwan
Gupta, Bikesh
Tan, Hark H.
Jagadish, Chennupati
Oh, Jihun
Karuturi, Siva
author_facet Lee, Yonghwan
Gupta, Bikesh
Tan, Hark H.
Jagadish, Chennupati
Oh, Jihun
Karuturi, Siva
author_sort Lee, Yonghwan
collection PubMed
description Thin semiconductors attract huge interest due to their cost-effective, flexible, lightweight, and semi-transparent properties. Here, we present a protocol on the preparation of thin semiconductor via controlled crack-assisted layer exfoliation technique. The protocol details the fabrication procedure for producing thin monocrystalline semiconductors with thicknesses in the range of a few tens of micrometers from thick donor substrates. In addition, we describe proof-of-concept application of the thin semiconductors for photoelectrochemical water-splitting to produce hydrogen fuel. For complete details on the use and execution of this protocol, please refer to Lee et al. (2021).
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spelling pubmed-90769632022-05-08 Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting Lee, Yonghwan Gupta, Bikesh Tan, Hark H. Jagadish, Chennupati Oh, Jihun Karuturi, Siva STAR Protoc Protocol Thin semiconductors attract huge interest due to their cost-effective, flexible, lightweight, and semi-transparent properties. Here, we present a protocol on the preparation of thin semiconductor via controlled crack-assisted layer exfoliation technique. The protocol details the fabrication procedure for producing thin monocrystalline semiconductors with thicknesses in the range of a few tens of micrometers from thick donor substrates. In addition, we describe proof-of-concept application of the thin semiconductors for photoelectrochemical water-splitting to produce hydrogen fuel. For complete details on the use and execution of this protocol, please refer to Lee et al. (2021). Elsevier 2022-01-07 /pmc/articles/PMC9076963/ /pubmed/35535167 http://dx.doi.org/10.1016/j.xpro.2021.101015 Text en © 2021 The Author(s) https://creativecommons.org/licenses/by/4.0/This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Protocol
Lee, Yonghwan
Gupta, Bikesh
Tan, Hark H.
Jagadish, Chennupati
Oh, Jihun
Karuturi, Siva
Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
title Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
title_full Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
title_fullStr Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
title_full_unstemmed Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
title_short Protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
title_sort protocol on the fabrication of monocrystalline thin semiconductor via crack-assisted layer exfoliation technique for photoelectrochemical water-splitting
topic Protocol
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9076963/
https://www.ncbi.nlm.nih.gov/pubmed/35535167
http://dx.doi.org/10.1016/j.xpro.2021.101015
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