Electronic transport properties of PbSi Schottky-clamped transistors with a surrounding metal–insulator gate

Sustaining Moore's law requires the design of new materials and the construction of FET. Herein, we investigated theoretically the electronic transport properties of PbSi nanowire Schottky-clamped transistors with a surrounding metal–insulator gate by employing MD simulations and the NEGF metho...

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Detalles Bibliográficos
Autores principales: Zhang, Lishu, Li, Yifan, Li, Tao, Li, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077087/
https://www.ncbi.nlm.nih.gov/pubmed/35540866
http://dx.doi.org/10.1039/c7ra11653e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077087/
https://www.ncbi.nlm.nih.gov/pubmed/35540866
http://dx.doi.org/10.1039/c7ra11653e

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