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Electronic transport properties of PbSi Schottky-clamped transistors with a surrounding metal–insulator gate
Sustaining Moore's law requires the design of new materials and the construction of FET. Herein, we investigated theoretically the electronic transport properties of PbSi nanowire Schottky-clamped transistors with a surrounding metal–insulator gate by employing MD simulations and the NEGF metho...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077087/ https://www.ncbi.nlm.nih.gov/pubmed/35540866 http://dx.doi.org/10.1039/c7ra11653e |