Crystallographic orientation control and optical properties of GaN nanowires

The optical and electrical properties of nitride materials are closely related to their crystallographic orientation. Here, we report our effort on crystallographic orientation manipulation of GaN NWs using vapour–liquid–solid hydride vapour phase epitaxy (VLS-HVPE). The growth orientations of the G...

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Detalles Bibliográficos
Autores principales: Wu, Shaoteng, Wang, Liancheng, Yi, Xiaoyan, Liu, Zhiqiang, Yan, Jianchang, Yuan, Guodong, Wei, Tongbo, Wang, Junxi, Li, Jinmin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077256/
https://www.ncbi.nlm.nih.gov/pubmed/35542617
http://dx.doi.org/10.1039/c7ra11408g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077256/
https://www.ncbi.nlm.nih.gov/pubmed/35542617
http://dx.doi.org/10.1039/c7ra11408g

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