Highly sensitive p-type 4H-SiC van der Pauw sensor

This paper presents for the first time a p-type 4H silicon carbide (4H-SiC) van der Pauw strain sensor by utilizing the strain induced effect in four-terminal devices. The sensor was fabricated from a 4H-SiC (0001) wafer, using a 1 μm thick p-type epilayer with a concentration of 10(18) cm(−3). Taki...

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Detalles Bibliográficos
Autores principales: Nguyen, Tuan-Khoa, Phan, Hoang-Phuong, Han, Jisheng, Dinh, Toan, Md Foisal, Abu Riduan, Dimitrijev, Sima, Zhu, Yong, Nguyen, Nam-Trung, Dao, Dzung Viet
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077490/
https://www.ncbi.nlm.nih.gov/pubmed/35541213
http://dx.doi.org/10.1039/c7ra11922d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077490/
https://www.ncbi.nlm.nih.gov/pubmed/35541213
http://dx.doi.org/10.1039/c7ra11922d

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