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Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors
Despite their huge impact on future electronics, two-dimensional (2D) dichalcogenide semiconductor (TMD) based transistors suffer from the hysteretic characteristics induced by the defect traps located at the dielectric/TMD channel interface. Here, we introduce a hydroxyl-group free organic dielectr...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077681/ https://www.ncbi.nlm.nih.gov/pubmed/35541189 http://dx.doi.org/10.1039/c7ra12641g |