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Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors

Despite their huge impact on future electronics, two-dimensional (2D) dichalcogenide semiconductor (TMD) based transistors suffer from the hysteretic characteristics induced by the defect traps located at the dielectric/TMD channel interface. Here, we introduce a hydroxyl-group free organic dielectr...

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Detalles Bibliográficos
Autores principales: Yoon, Minho, Ko, Kyeong Rok, Min, Sung-Wook, Im, Seongil
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9077681/
https://www.ncbi.nlm.nih.gov/pubmed/35541189
http://dx.doi.org/10.1039/c7ra12641g