Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al(2)O(3)) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (T(dep)). The Al(2)O(3) gate insulator with a low T(dep) exhibited a high amount of hydrogen...

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Detalles Bibliográficos
Autores principales: Nam, Yunyong, Kim, Hee-Ok, Cho, Sung Haeng, Ko Park, Sang-Hee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078200/
https://www.ncbi.nlm.nih.gov/pubmed/35542402
http://dx.doi.org/10.1039/c7ra12841j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078200/
https://www.ncbi.nlm.nih.gov/pubmed/35542402
http://dx.doi.org/10.1039/c7ra12841j

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