Effect of OH(−) on chemical mechanical polishing of β-Ga(2)O(3) (100) substrate using an alkaline slurry

β-Ga(2)O(3), a semiconductor material, has attracted considerable attention given its potential applications in high-power devices, such as high-performance field-effect transistors. For decades, β-Ga(2)O(3) has been processed through chemical mechanical polishing (CMP). Nevertheless, the understand...

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Detalles Bibliográficos
Autores principales: Huang, Chuanjin, Mu, Wenxiang, Zhou, Hai, Zhu, Yongwei, Xu, Xiaoming, Jia, Zhitai, Zheng, Lei, Tao, Xutang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078310/
https://www.ncbi.nlm.nih.gov/pubmed/35540376
http://dx.doi.org/10.1039/c7ra11570a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078310/
https://www.ncbi.nlm.nih.gov/pubmed/35540376
http://dx.doi.org/10.1039/c7ra11570a

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