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Effect of OH(−) on chemical mechanical polishing of β-Ga(2)O(3) (100) substrate using an alkaline slurry
β-Ga(2)O(3), a semiconductor material, has attracted considerable attention given its potential applications in high-power devices, such as high-performance field-effect transistors. For decades, β-Ga(2)O(3) has been processed through chemical mechanical polishing (CMP). Nevertheless, the understand...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078310/ https://www.ncbi.nlm.nih.gov/pubmed/35540376 http://dx.doi.org/10.1039/c7ra11570a |