Structural and electronic properties of hydrogenated GaBi and InBi honeycomb monolayers with point defects

First-principles calculations are carried out to systematically investigate the structural and electronic properties of point defects in hydrogenated GaBi and InBi monolayers, including vacancies, antisites and Stone–Wales (SW) defects. Our results imply that the perfect H(2)-Ga(In)Bi is a semicondu...

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Detalles Bibliográficos
Autores principales: Zhang, Yunzhen, Ye, Han, Yu, Zhongyuan, Gao, Han, Liu, Yumin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078320/
https://www.ncbi.nlm.nih.gov/pubmed/35540318
http://dx.doi.org/10.1039/c8ra00369f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9078320/
https://www.ncbi.nlm.nih.gov/pubmed/35540318
http://dx.doi.org/10.1039/c8ra00369f

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