The investigation of in situ removal of Si substrates for freestanding GaN crystals by HVPE

We investigate the etching of a Si substrate in the fabrication process of freestanding GaN crystal grown using a Si by HVPE. Followed by crystal growth, Si etching by vapor HCl at high temperature results in successful fabrication of the freestanding GaN. Due to the complicated vertical gas flows i...

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Detalles Bibliográficos
Autores principales: Lee, Moonsang, Mikulik, Dmitry, Park, Sungsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9079237/
https://www.ncbi.nlm.nih.gov/pubmed/35539420
http://dx.doi.org/10.1039/c8ra01347k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9079237/
https://www.ncbi.nlm.nih.gov/pubmed/35539420
http://dx.doi.org/10.1039/c8ra01347k

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