Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10(3) in the rectification model and an ON/OFF current ratio of 121 in the...

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Detalles Bibliográficos
Autores principales: Lu, Hang, Chen, Yingying, Chang, Qing, Cheng, Shuai, Ding, Yamei, Chen, Jie, Xiu, Fei, Wang, Xiangjing, Ban, Chaoyi, Liu, Zhengdong, Liu, Juqing, Huang, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9079846/
https://www.ncbi.nlm.nih.gov/pubmed/35539360
http://dx.doi.org/10.1039/c8ra01928b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9079846/
https://www.ncbi.nlm.nih.gov/pubmed/35539360
http://dx.doi.org/10.1039/c8ra01928b

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