Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10(3) in the rectification model and an ON/OFF current ratio of 121 in the...

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Detalles Bibliográficos
Autores principales: Lu, Hang, Chen, Yingying, Chang, Qing, Cheng, Shuai, Ding, Yamei, Chen, Jie, Xiu, Fei, Wang, Xiangjing, Ban, Chaoyi, Liu, Zhengdong, Liu, Juqing, Huang, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9079846/
https://www.ncbi.nlm.nih.gov/pubmed/35539360
http://dx.doi.org/10.1039/c8ra01928b
Descripción
Sumario:A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10(3) in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.

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