Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10(3) in the rectification model and an ON/OFF current ratio of 121 in the...

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Autores principales: Lu, Hang, Chen, Yingying, Chang, Qing, Cheng, Shuai, Ding, Yamei, Chen, Jie, Xiu, Fei, Wang, Xiangjing, Ban, Chaoyi, Liu, Zhengdong, Liu, Juqing, Huang, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9079846/
https://www.ncbi.nlm.nih.gov/pubmed/35539360
http://dx.doi.org/10.1039/c8ra01928b
_version_ 1784702647959289856
author Lu, Hang
Chen, Yingying
Chang, Qing
Cheng, Shuai
Ding, Yamei
Chen, Jie
Xiu, Fei
Wang, Xiangjing
Ban, Chaoyi
Liu, Zhengdong
Liu, Juqing
Huang, Wei
author_facet Lu, Hang
Chen, Yingying
Chang, Qing
Cheng, Shuai
Ding, Yamei
Chen, Jie
Xiu, Fei
Wang, Xiangjing
Ban, Chaoyi
Liu, Zhengdong
Liu, Juqing
Huang, Wei
author_sort Lu, Hang
collection PubMed
description A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10(3) in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers.
format Online
Article
Text
id pubmed-9079846
institution National Center for Biotechnology Information
language English
publishDate 2018
publisher The Royal Society of Chemistry
record_format MEDLINE/PubMed
spelling pubmed-90798462022-05-09 Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping Lu, Hang Chen, Yingying Chang, Qing Cheng, Shuai Ding, Yamei Chen, Jie Xiu, Fei Wang, Xiangjing Ban, Chaoyi Liu, Zhengdong Liu, Juqing Huang, Wei RSC Adv Chemistry A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed. The fabricated device exhibits a rectification of 10(3) in the rectification model and an ON/OFF current ratio of 121 in the memory model. The rectifying behavior was attributed to an energy level offset between the electrodes and the bilayer polymers and the memory effect was induced by carrier trapping of carbon dots within the polymers. The Royal Society of Chemistry 2018-04-16 /pmc/articles/PMC9079846/ /pubmed/35539360 http://dx.doi.org/10.1039/c8ra01928b Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
Lu, Hang
Chen, Yingying
Chang, Qing
Cheng, Shuai
Ding, Yamei
Chen, Jie
Xiu, Fei
Wang, Xiangjing
Ban, Chaoyi
Liu, Zhengdong
Liu, Juqing
Huang, Wei
Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping
title Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping
title_full Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping
title_fullStr Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping
title_full_unstemmed Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping
title_short Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping
title_sort polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9079846/
https://www.ncbi.nlm.nih.gov/pubmed/35539360
http://dx.doi.org/10.1039/c8ra01928b
work_keys_str_mv AT luhang polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT chenyingying polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT changqing polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT chengshuai polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT dingyamei polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT chenjie polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT xiufei polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT wangxiangjing polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT banchaoyi polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT liuzhengdong polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT liujuqing polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping
AT huangwei polymercarbondothybridstructureforaselfrectifyingmemorydevicebyenergyleveloffsetanddoping

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