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Fully solution-induced high performance indium oxide thin film transistors with ZrO(x) high-k gate dielectrics
Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solut...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080338/ https://www.ncbi.nlm.nih.gov/pubmed/35540525 http://dx.doi.org/10.1039/c8ra02108b |