Fully solution-induced high performance indium oxide thin film transistors with ZrO(x) high-k gate dielectrics

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In(2)O(3) thin films and ZrO(x) gate dielectrics, as well as the fabrication of In(2)O(3)-based TFTs. To verify the possible applications of ZrO(x) thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced In(2)O(3) TFTs based on ZrO(2) dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 °C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high μ(sat) of 4.42 cm(2) V(−1) s(−1), low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large I(on)/I(off) of 7.5 × 10(7), respectively. The as-fabricated In(2)O(3)/ZrO(x) TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.