Highly stable ITO/Zn(2)TiO(4)/Pt resistive random access memory and its application in two-bit-per-cell

We discuss the fabrication procedure and device characteristics of ITO/Zn(2)TiO(4)/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics with no obvious...

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Detalles Bibliográficos
Autores principales: Chen, Shi-Xiang, Chang, Sheng-Po, Hsieh, Wei-Kang, Chang, Shoou-Jinn, Lin, Chih-Chien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080498/
https://www.ncbi.nlm.nih.gov/pubmed/35542070
http://dx.doi.org/10.1039/c8ra03181a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080498/
https://www.ncbi.nlm.nih.gov/pubmed/35542070
http://dx.doi.org/10.1039/c8ra03181a

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