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Highly stable ITO/Zn(2)TiO(4)/Pt resistive random access memory and its application in two-bit-per-cell
We discuss the fabrication procedure and device characteristics of ITO/Zn(2)TiO(4)/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics with no obvious...
Autores principales: | Chen, Shi-Xiang, Chang, Sheng-Po, Hsieh, Wei-Kang, Chang, Shoou-Jinn, Lin, Chih-Chien |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080498/ https://www.ncbi.nlm.nih.gov/pubmed/35542070 http://dx.doi.org/10.1039/c8ra03181a |
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