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Bending effect on the resistive switching behavior of a NiO/TiO(2) p–n heterojunction
Herein, NiO/TiO(2) heterojunctions were fabricated by sol–gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p–n interface....
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080738/ https://www.ncbi.nlm.nih.gov/pubmed/35540998 http://dx.doi.org/10.1039/c8ra01180j |