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Bending effect on the resistive switching behavior of a NiO/TiO(2) p–n heterojunction

Herein, NiO/TiO(2) heterojunctions were fabricated by sol–gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p–n interface....

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Detalles Bibliográficos
Autores principales:	Cui, Hai-peng, Li, Jian-chang, Yuan, Hai-lin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080738/ https://www.ncbi.nlm.nih.gov/pubmed/35540998 http://dx.doi.org/10.1039/c8ra01180j

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