A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure

III-Nitride nanowires are currently considered as next generation photovoltaic materials due to their excellent physical properties together with reduced dislocation densities, increased surface area and thus enhanced light absorption and direct path for carrier transport. Here, we investigate the p...

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Detalles Bibliográficos
Autores principales: Park, Ji-Hyeon, Nandi, R., Sim, Jae-Kwan, Um, Dae-Young, Kang, San, Kim, Jin-Soo, Lee, Cheul-Ro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080813/
https://www.ncbi.nlm.nih.gov/pubmed/35542348
http://dx.doi.org/10.1039/c8ra03127d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080813/
https://www.ncbi.nlm.nih.gov/pubmed/35542348
http://dx.doi.org/10.1039/c8ra03127d

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