Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)

The resistive switching memory effects in metal-insulator-metal devices with aluminium (Al) as top electrode (TE) and bottom electrode (BE). A solution processed active layer consisting of zinc oxide (ZnO) nanoparticles embedded in an insulating polyvinyl alcohol (PVA) matrix and polymer poly(3,4-et...

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Detalles Bibliográficos
Autor principal: Hmar, Jehova Jire L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080816/
https://www.ncbi.nlm.nih.gov/pubmed/35541659
http://dx.doi.org/10.1039/c8ra04582h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080816/
https://www.ncbi.nlm.nih.gov/pubmed/35541659
http://dx.doi.org/10.1039/c8ra04582h

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