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Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)
The resistive switching memory effects in metal-insulator-metal devices with aluminium (Al) as top electrode (TE) and bottom electrode (BE). A solution processed active layer consisting of zinc oxide (ZnO) nanoparticles embedded in an insulating polyvinyl alcohol (PVA) matrix and polymer poly(3,4-et...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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The Royal Society of Chemistry
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9080816/ https://www.ncbi.nlm.nih.gov/pubmed/35541659 http://dx.doi.org/10.1039/c8ra04582h |