Cargando…
A near-infrared photoinverter based on ZnO and quantum-dots
Near-infrared (NIR) photoswitching transistors have been fabricated using a hybrid structure of zinc oxide (ZnO) and quantum-dots (QDs). The ZnO active layer was prepared using a solution process, while colloidal QDs were inserted between a silicon dioxide (SiO(2)) gate insulator and a ZnO active la...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9081654/ https://www.ncbi.nlm.nih.gov/pubmed/35540154 http://dx.doi.org/10.1039/c8ra03588a |