A vertical WSe(2)–MoSe(2) p–n heterostructure with tunable gate rectification

Here, we report the synthesis of a vertical MoSe(2)/WSe(2) p–n heterostructure using a sputtering-CVD method. Unlike the conventional CVD method, this method produced a continuous MoSe(2)/WSe(2) p–n heterostructure. WSe(2) and MoSe(2) back-gated field effect transistors (FETs) exhibited good gate mo...

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Detalles Bibliográficos
Autores principales: Liu, Hailing, Hussain, Sajjad, Ali, Asif, Naqvi, Bilal Abbas, Vikraman, Dhanasekaran, Jeong, Woonyoung, Song, Wooseok, An, Ki-Seok, Jung, Jongwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9082623/
https://www.ncbi.nlm.nih.gov/pubmed/35539784
http://dx.doi.org/10.1039/c8ra03398f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9082623/
https://www.ncbi.nlm.nih.gov/pubmed/35539784
http://dx.doi.org/10.1039/c8ra03398f

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