Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical t...

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Detalles Bibliográficos
Autores principales: Sang, Dandan, Wang, Qingru, Wang, Qinglin, Zhang, Dong, Hu, Haiquan, Wang, Wenjun, Zhang, Bingyuan, Fan, Quli, Li, Hongdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9084402/
https://www.ncbi.nlm.nih.gov/pubmed/35548401
http://dx.doi.org/10.1039/c8ra03546f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9084402/
https://www.ncbi.nlm.nih.gov/pubmed/35548401
http://dx.doi.org/10.1039/c8ra03546f

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