Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical t...

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Detalles Bibliográficos
Autores principales: Sang, Dandan, Wang, Qingru, Wang, Qinglin, Zhang, Dong, Hu, Haiquan, Wang, Wenjun, Zhang, Bingyuan, Fan, Quli, Li, Hongdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9084402/
https://www.ncbi.nlm.nih.gov/pubmed/35548401
http://dx.doi.org/10.1039/c8ra03546f
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author Sang, Dandan
Wang, Qingru
Wang, Qinglin
Zhang, Dong
Hu, Haiquan
Wang, Wenjun
Zhang, Bingyuan
Fan, Quli
Li, Hongdong
author_facet Sang, Dandan
Wang, Qingru
Wang, Qinglin
Zhang, Dong
Hu, Haiquan
Wang, Wenjun
Zhang, Bingyuan
Fan, Quli
Li, Hongdong
author_sort Sang, Dandan
collection PubMed
description A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I–V characteristics and relatively high performance for the electrical transport properties.
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spelling pubmed-90844022022-05-10 Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction Sang, Dandan Wang, Qingru Wang, Qinglin Zhang, Dong Hu, Haiquan Wang, Wenjun Zhang, Bingyuan Fan, Quli Li, Hongdong RSC Adv Chemistry A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved I–V characteristics and relatively high performance for the electrical transport properties. The Royal Society of Chemistry 2018-08-13 /pmc/articles/PMC9084402/ /pubmed/35548401 http://dx.doi.org/10.1039/c8ra03546f Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
Sang, Dandan
Wang, Qingru
Wang, Qinglin
Zhang, Dong
Hu, Haiquan
Wang, Wenjun
Zhang, Bingyuan
Fan, Quli
Li, Hongdong
Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction
title Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction
title_full Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction
title_fullStr Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction
title_full_unstemmed Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction
title_short Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction
title_sort improved electrical transport properties of an n-zno nanowire/p-diamond heterojunction
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9084402/
https://www.ncbi.nlm.nih.gov/pubmed/35548401
http://dx.doi.org/10.1039/c8ra03546f
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