Effects of stacking method and strain on the electronic properties of the few-layer group-IVA monochalcogenide heterojunctions

Group-IV monochalcogenides (GeSe, SnSe, GeS, SnS) are a class of promising monolayer materials for nanoelectronic applications. However, the GeSe monolayer is the only direct semiconductor in the group-IV monochalcogenides, which limits their application in nanoelectronic fields. Stacking is usually...

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Detalles Bibliográficos
Autores principales: Hu, Yonghong, Mao, Caixia, Yan, Zhong, Shu, Ting, Ni, Hao, Xue, Li, Wu, Yunyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085287/
https://www.ncbi.nlm.nih.gov/pubmed/35547281
http://dx.doi.org/10.1039/c8ra05086d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085287/
https://www.ncbi.nlm.nih.gov/pubmed/35547281
http://dx.doi.org/10.1039/c8ra05086d

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