Band offset and an ultra-fast response UV-VIS photodetector in γ-In(2)Se(3)/p-Si heterojunction heterostructures

High-quality γ-In(2)Se(3) thin films and a γ-In(2)Se(3)/p-Si heterojunction were prepared using pulse laser deposition (PLD). The band offset of this heterojunction was studied by XPS and the band structure was found to be type II structure. The valence band offset (ΔE(v)) and the conduction band of...

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Detalles Bibliográficos
Autores principales: Fang, Y. X., Zhang, H., Azad, F., Wang, S. P., Ling, F. C. C., Su, S. C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085293/
https://www.ncbi.nlm.nih.gov/pubmed/35547303
http://dx.doi.org/10.1039/c8ra05677c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085293/
https://www.ncbi.nlm.nih.gov/pubmed/35547303
http://dx.doi.org/10.1039/c8ra05677c

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