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Epitaxial growth and interfacial property of monolayer MoS(2) on gallium nitride
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) on semiconductor substrates are important for next-generation electronics and optoelectronics. In this study, we demonstrate the growth of monolayer MoS(2) on a lattice-matched gallium nitride (GaN) semiconductor substrate by chemical vap...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086336/ https://www.ncbi.nlm.nih.gov/pubmed/35548113 http://dx.doi.org/10.1039/c8ra04821e |