Epitaxial growth and interfacial property of monolayer MoS(2) on gallium nitride

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) on semiconductor substrates are important for next-generation electronics and optoelectronics. In this study, we demonstrate the growth of monolayer MoS(2) on a lattice-matched gallium nitride (GaN) semiconductor substrate by chemical vapor deposition (CVD). The monolayer MoS(2) triangles exhibit optical properties similar to that of typical single-crystal MoS(2) sheets, as verified by the Raman, photoluminescence, and morphological characterizations. The Raman and PL features and their intensity mappings suggest that the as-grown MoS(2) on GaN substrate can achieve high quality and uniformity, demonstrating that GaN substrate is favorable for 2D MoS(2) growth. Moreover, the interfacial property and stacking structure were investigated by first-principles density functional theory (DFT) calculations to confirm the interlayer interactions of monolayer MoS(2) on GaN. Accordingly, the ability to grow high quality monolayer MoS(2) on semiconductor GaN substrate would open a new route toward the synthesis of hetero and composite structures for promising electronic and optoelectronic device applications.