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Epitaxial growth and interfacial property of monolayer MoS(2) on gallium nitride

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) on semiconductor substrates are important for next-generation electronics and optoelectronics. In this study, we demonstrate the growth of monolayer MoS(2) on a lattice-matched gallium nitride (GaN) semiconductor substrate by chemical vap...

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Detalles Bibliográficos
Autores principales:	Yan, Pengfei, Tian, Qianqian, Yang, Guofeng, Weng, Yuyan, Zhang, Yixin, Wang, Jin, Xie, Feng, Lu, Naiyan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086336/ https://www.ncbi.nlm.nih.gov/pubmed/35548113 http://dx.doi.org/10.1039/c8ra04821e

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