Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network

An enhanced self-powered near-ultraviolet photodetection phenomenon was observed in epitaxial gallium nitride (GaN) nanorods network grown on an intermediate layer of N:GaN on a nitridated HfO(2)(N:HfO(2))/SiO(2)/p-Si substrate. The fabricated Au/GaN/N:GaN/N:HfO(2)/Ag heterostructure exhibited a gia...

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Detalles Bibliográficos
Autores principales: Thakre, Atul, Kushvaha, Sunil Singh, Kumar, M. Senthil, Kumar, Ashok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086369/
https://www.ncbi.nlm.nih.gov/pubmed/35547666
http://dx.doi.org/10.1039/c8ra06101g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086369/
https://www.ncbi.nlm.nih.gov/pubmed/35547666
http://dx.doi.org/10.1039/c8ra06101g

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