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Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network
An enhanced self-powered near-ultraviolet photodetection phenomenon was observed in epitaxial gallium nitride (GaN) nanorods network grown on an intermediate layer of N:GaN on a nitridated HfO(2)(N:HfO(2))/SiO(2)/p-Si substrate. The fabricated Au/GaN/N:GaN/N:HfO(2)/Ag heterostructure exhibited a gia...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086369/ https://www.ncbi.nlm.nih.gov/pubmed/35547666 http://dx.doi.org/10.1039/c8ra06101g |