Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

Bismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are readily oxidised in ambient air, necessitating addit...

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Detalles Bibliográficos
Autores principales: Alessio Verni, Giuseppe, Long, Brenda, Gity, Farzan, Lanius, Martin, Schüffelgen, Peter, Mussler, Gregor, Grützmacher, Detlev, Greer, Jim, Holmes, Justin D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086459/
https://www.ncbi.nlm.nih.gov/pubmed/35548121
http://dx.doi.org/10.1039/c8ra06840b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086459/
https://www.ncbi.nlm.nih.gov/pubmed/35548121
http://dx.doi.org/10.1039/c8ra06840b

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