Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work. The microstructure and optical properties of ITZO thin films at different annealing temperatures were analyzed. The impact o...

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Detalles Bibliográficos
Autores principales: Zhong, Wei, Li, Guoyuan, Lan, Linfeng, Li, Bin, Chen, Rongsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086981/
https://www.ncbi.nlm.nih.gov/pubmed/35547050
http://dx.doi.org/10.1039/c8ra06692b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9086981/
https://www.ncbi.nlm.nih.gov/pubmed/35547050
http://dx.doi.org/10.1039/c8ra06692b

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